Eat shit, spambot.

PLEASE DONATE https://www.paypal.me/WATERPOWEREDCAR send this to everyone you can. https://en.wikipedia.org/wiki/Crystal_radio A crystal radio receiver, also called a crystal set or cat's whisker receiver, is a very simple radio receiver, popular in the early days of radio. It needs no other power source but that received solely from the power of radio waves received by a wire antenna. It gets its name from its most important component, known as a crystal detector, originally made from a piece of crystalline mineral such as galena.[1] This component is now called a diode. (SILICON CARBIDE BETTER AND CHEAPER) https://en.wikipedia.org/wiki/Rectenna A rectenna is a rectifying antenna—a special type of antenna that is used for converting electromagnetic energy into direct current (DC) electricity. They are used in wireless power transmission systems that transmit power by radio waves. A simple rectenna element consists of a dipole antenna with an RF diode connected across the dipole elements. The diode (SILICON CARBIDE) rectifies the AC current induced in the antenna by the microwaves, to produce DC power, which powers a load connected across the diode (GROUNDED LIKE CRYSTAL RADIO) https://en.wikipedia.org/wiki/Graphene_antenna http://aip.scitation.org/doi/abs/10.1063/1.4962642?journalCode=apl Graphene rectenna for efficient energy harvesting at terahertz frequencies http://ieeexplore.ieee.org/document/6186372/ https://phys.org/news/2017-05-graphene-silicon-carbide-energy.html Graphene on silicon carbide can store energy https://phys.org/news/2017-04-graphene-sieve-seawater.html Graphene sieve turns seawater into drinking water https://www.ntt-review.jp/archive/ntttechnical.php?contents=ntr201008sf4.html methods of growing FLG epitaxially on SiC by thermal decomposition (Fig. 1) are attracting intense interest. When SiC substrates are annealed at high temperatures, Si atoms selectively desorb from the surface and the C atoms left behind naturally form FLG. Because SiC is a wide-band-gap semiconductor, FLG on SiC can serve as a graphene substrate for electronics applications. SiC wafer technology is advancing rapidly in terms of production cost and scale, and our results to date indicate that the thermal decomposition method is indeed suitable for large-scale FLG fabrication. few-layer graphene (FLG https://en.wikipedia.org/wiki/Silicon_carbide Electronic applications of silicon carbide such as light-emitting diodes (LEDs) and detectors in early radios were first demonstrated around 1907. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both. https://en.wikipedia.org/wiki/Silicon_carbide#Production Because of the rarity of natural moissanite, most silicon carbide is synthetic. It is used as an abrasive, and more recently as a semiconductor and diamond simulant of gem quality. The simplest manufacturing process is to combine silica sand and carbon in an Acheson graphite electric resistance furnace at a high temperature, between 1,600 °C (2,910 °F) and 2,500 °C (4,530 °F). Fine SiO2 particles in plant material (e.g. rice husks) can be converted to SiC by heating in the excess carbon from the organic material.[16] The silica fume, which is a byproduct of producing silicon metal and ferrosilicon alloys, also can be converted to SiC by heating with graphite at 1,500 °C (2,730 °F).[17] https://en.wikipedia.org/wiki/Graphene_production_techniques https://en.wikipedia.org/wiki/Graphene_production_techniques#Chemical_vapor_deposition Heating silicon carbide (SiC) to high temperatures (>1100 °C) under low pressures (~10−6 torr) reduces it to graphene.[25] This process produces epitaxial graphene with dimensions dependent upon the size of the wafer. The face of the SiC used for graphene formation, silicon- or carbon-terminated, highly influences the thickness, mobility and carrier density.